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Micron unveils its latest UFS modules. (Source: Micron)
Micron has unleashed new flash storage with the updated UFS 4.0 standard on the mobile device memory market. The OEM asserts that it can double the speeds associated with its predecessor, while using up to 25% less power. Its “advanced” 3D NAND is backed to help make next-gen premium up-to-1TB smartphones.
Micron overtly pitches its latest flash modules at successors to devices such as the OnePlus 11, Xiaomi 13 Ultra and Motorola Edge Plus 2023, as they conform to the updated UFS 4.0 requirements for its category. This “the next big thing in mobile storage” incorporates the OEM’s latest market-ready technology for specs that might blow its previous generation away.
The step up to UFS 4.0 is accompanied by the use of 232-layer 3D NAND chips, compared to 176 layers in Micron’s UFS 3.1 flash storage. The upgrade is backed to go at up to 2x the speed of its predecessor, with sequential write and read speeds of up to 4,000 megabytes per second (MB/s) and 4,300MB/s respectively.
Accordingly, the OEM asserts that its UFS 4.0 memory “delivers best-in-class performance” – so long as the next generation of top-end smartphones take it up, that is. These oneday flagships could have up to 1TB of this “class-leading” flash memory in the near future.
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Deirdre O Donnell – Senior Tech Writer – 6439 articles published on Notebookcheck since 2018
I became a professional writer and editor shortly after graduation. My degrees are in biomedical sciences; however, they led to some experience in the biotech area, which convinced me of its potential to revolutionize our health, environment and lives in general. This developed into an all-consuming interest in more aspects of tech over time: I can never write enough on the latest electronics, gadgets and innovations. My other interests include imaging, astronomy, and streaming all the things. Oh, and coffee.
Deirdre O’Donnell, 2023-06-24 (Update: 2023-06-24)
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